dss5240t document number: ds31591 rev. 2 - 2 1 of 4 www.diodes.com november 2008 ? diodes incorporated dss5240t new product low v ce(sat) pnp surface mo unt transistor features ? ideal for medium power amplification and switching ? ultra low collector-emitter saturation voltage ? complimentary npn type available (dss4240t) ? lead free by design/rohs compliant (note 1) ? ?green? device (note 2) mechanical data ? case: sot-23 ? case material: molded plastic, "green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? marking information: see page 2 ? ordering information: see page 2 ? weight: 0.008 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v peak pulse collector current i cm -3 a continuous collector current i c -2 a peak base current i bm -0.3 a thermal characteristics characteristic symbol value unit power dissipation (note 3) @ t a = 25c p d 600 mw thermal resistance, junction to ambient air (note 3) @ t a = 25c r ja 209 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our websit e at http://www.diodes.com/p roducts/lead_free/index.php. 3. device mounted on fr-4 pcb with minimum recommended pad layout. top view device schematic e b c
dss5240t document number: ds31591 rev. 2 - 2 2 of 4 www.diodes.com november 2008 ? diodes incorporated dss5240t new product electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test conditions off characteristics collector-base breakdown voltage v ( br ) cbo -40 ? ? v i c = -100 a collector-emitter breakdown voltage (note 4) v ( br ) ceo -40 ? ? v i c = -10ma emitter-base breakdown voltage v ( br ) ebo -5 ? ? v i e = -100 a collector-base cutoff current i cbo ? ? -100 na v cb = -30v, i e = 0 ? ? -50 a v cb = -30v, i e = 0, t a = 150c emitter-base cutoff current i ebo ? ? -100 na v eb = -4v, i c = 0 on characteristics (note 4) dc current gain h fe 300 ? ? ? v ce = -2v, i c = -0.1a 260 ? ? v ce = -2v, i c = -0.5a 210 ? ? v ce = -2v, i c = -1a 100 ? ? v ce = -2v, i c = -2a collector-emitter saturation voltage v ce(sat) ? ? -100 mv i c = -100ma, i b = -1ma ? 45 -110 i c = -500ma, i b = -50ma ? ? -225 i c = -750ma, i b = -15ma ? ? -225 i c = -1a, i b = -50ma ? ? -350 i c = -2a, i b = -200ma equivalent on-resistance r ce ( sat ) ? 90 220 m i c = -500ma, i b = -50ma base-emitter saturation voltage v be ( sat ) ? ? -1.1 v i c = -2a, i b = -200ma base-emitter turn-on voltage v be ( on ) ? ? -0.75 v v ce = -2v, i c = -100ma small signal characteristics transition frequency f t 100 ? ? mhz v ce = -10v, i c = -100ma, f = 100mhz output capacitance c ob ? ? 28 pf v cb = -10v, f = 1mhz notes: 4. measured under pulsed conditions. pulse width = 300 s. duty cycle 2%. 0 0 p , power dissipation (mw) d t , ambient temperature ( c) a r = 209c/w ja fig. 1 power dissipation vs. ambient temperature (note 3) 100 200 300 400 500 25 50 75 100 125 150 600 700 800 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0123 4567 8910 -i , c o lle c t o r c u r r e n t (a) c i = -1ma b i = -2ma b i = -3ma b i = -4ma b i = -5ma b -v , collector-emitter voltage (v) ce fig. 2 typical collector current vs. collector-emitter voltage
dss5240t document number: ds31591 rev. 2 - 2 3 of 4 www.diodes.com november 2008 ? diodes incorporated dss5240t new product 1 10 100 1,000 10,000 -i , collector current (ma) c fig. 3 typical dc current gain vs. collector current 10 100 10,000 h, d c c u r r e n t g ai n fe 1,000 t = 150c a t = 25c a t = -55c a t = 85c a v = -2v ce 1 10 100 1,000 10,000 -i , collector current (ma) c fig. 4 typical collector-emitter saturation voltage vs. collector current 0.001 0.01 0.1 -v , c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) 1 i/i = 10 cb t = 85c a t = 25c a t = -55c a t = 150c a 1 10 100 1,000 10,000 -i , collector current (ma) c fig. 5 typical base-emitter turn-on voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 1.2 -v , base-emi t t e r t u r n- o n v o l t a g e (v) be(on) t = 150c a t = 25c a t = -55c a t = 85c a v = -2v ce 1 10 100 1,000 10,000 -i , collector current (ma) c fig. 6 typical base-emitter saturation voltage vs. collector current 0.2 0.4 0.6 0.8 1.0 1.2 -v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) t = 150c a t = 25c a t = -55c a t = 85c a i = 10 cb /i 0.1 1 10 100 v , reverse voltage (v) r fig. 7 typical capacitance characteristics 1 10 100 1,000 c a p a c i t a n c e (p f ) c ibo c obo f = 1mhz 01020 30405060 708090100 -i , collector current (ma) c fig. 8 typical gain-bandwidth product vs. collector current 1 10 100 1,000 f, g ain-bandwid t h p r o d u c t (m h z) t v = -10v f = 100mhz ce
dss5240t document number: ds31591 rev. 2 - 2 4 of 4 www.diodes.com november 2008 ? diodes incorporated dss5240t new product ordering information (note 6) part number case packaging DSS5240T-7 sot-23 3000/tape & reel notes: 6. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions suggested pad layout important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. sot-23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.903 1.10 1.00 k1 - - 0.400 l 0.45 0.61 0.55 m 0.085 0.18 0.11 0 8 - all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 zp2 = product type marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) a m j l d f b c h k g k1 x e y c z zp2 ym
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